Modeling incomplete conformality during atomic layer deposition in high aspect ratio structures

Atomic layer deposition allows for precise control over film thickness and conformality. It is a critical enabler of high aspect ratio structures, such as 3D NAND memory, since its self-limiting behavior enables higher conformality than conventional processes. However, the increases, deviations from complete frequently occur, requiring comprehensive modeling to aid development novel technologies. To that end, we present model surface coverage during atomic where incomplete present. This combines existing approaches based on Knudsen diffusion Langmuir kinetics. Our expands state-of-the art by (i) incorporating gas-phase diffusivity through Bosanquet formula well reaction reversibility in framework first proposed Yanguas-Gil Elam, (ii) being efficiently integrated within level-set topography simulators. The manually calibrated published results prototypical Al2O3 TMA H2O lateral structures. We investigate temperature dependence step, thus extracting an activation energy 0.178eV which consistent with recent experiments. In observe increased accuracy reproduce multiple independent experiments same parameter set, highlighting parameters effectively capture reactor conditions.